Schottky Rectifier
Description
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com
VS-42CTQ030PbF, VS-42CTQ030-N3
Vishay Semiconductors
Schottky Rectifier, 2 x 20 A
Base 2 common cathode
TO-220AB
Anode
2 Anode
1 Common 3
cathode
PRODUCT SUMMARY
Package IF(AV) VR
VF at IF IRM max.
TJ max.
Diode variation
EAS
TO-220AB 2 x 20 A 30 V 0.
38 V
183 mA at 125 °C 150 °C
Common cathode 13 mJ
FEATURES
• 150 °C TJ operation • Very low forward voltage drop
• High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance
• High frequency operation
• Guard ring for enhanced ruggedness and long term reliability
• Compliant to RoHS Directive 2002/95/EC
• Designed and qualified according to JEDEC-JESD47
• Halogen-free according to IEC 61249-2-21 definition (-N3 only)
DESCRIPTION This center tap Schottky rectifier has been optimized for very low forward voltage drop, with moderate leakage.
The proprietary barrier technology allows for reliable operation up to 150 °C junction temperature.
Typical applications are in switching power supplies, converters, freewheeling diodes, and reverse battery protection.
MAJOR RATINGS AND CHARACTERISTICSL
SYMBOL
CHARACTERISTICS
IF(AV) VRRM IFSM VF TJ
Rectangular waveform
tp = 5 μs sine 20 Apk, TJ = 125 °C (per leg) Range
VALUES 40 30
1100 0.
38 - 55 to 150
UNITS A V A V °C
VOLTAGE RATINGS
PARAMETER Maximum DC reverse voltage Maximum working peak reverse voltage
SYMBOL VR
VRWM
VS-42CTQ030PbF VS-142TQ030-N3 30 30
UNITS V
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
Maximum average forward current See fig.
5
per leg per device
IF(AV)
Maximum peak one cycle non-repetitive surge current per leg See fig.
7
Non-repetitive avalanche energy per leg
IFSM EAS
Repetitive avalanche current per leg
IAR
TEST CONDITIONS
50 % duty cycle at TC = 121 °C, rectangular waveform
5 µs sine or 3 µs rect.
pulse 10 ms sine or 6 ms rect.
pulse
Following any rated load condition and with rated VRRM applied
TJ = 25 °C, IAS = 3 A, L = 2.
90 mH
Current decaying linearly to ze...
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