N-CHANNEL MOSFET
Description
CYStech Electronics Corp.
N-Channel MOSFET (dual transistors)
MTDN138ZS6R
Spec.
No.
: C320S6R Issued Date : 2012.
08.
17 Revised Date : 2013.
12.
19 Page No.
: 1/ 7
Features
• Low on-resistance • High ESD capability • High speed switching • Low-voltage drive • Easily designed drive circuits • Easy to use in parallel • Pb-free lead plating and halogen-free package
Equivalent Circuit
MTDN138ZS6R
Outline
SOT-363
Tr1 Tr2
Ordering Information
Device MTDN138ZS6R-0-T1-G
Package
Shipping
SOT-363 (Pb-free lead plating and halogen-free package)
3000 pcs / Tape & Reel
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and green compound products Packing spec, T1 : 3000 pcs / tape & reel, 7” reel
Product rank, zero for no rank products
Product name
MTDN138ZS6R
CYStek Product Specification
CYStech Electronics Corp.
Spec.
No.
: C320S6R Issued Date : 2012.
08.
17 Revised Date : 2013.
12.
19 Page No.
: 2/ 7
The following characteristics apply to both Tr1 and Tr2
Absolute Maximum Ratings (Ta=25°C)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current
Continuous Pulsed
Drain Reverse Current
Continuous Pulsed
Power Dissipation
ESD susceptibility
Operating Junction and Storage Temperature Range
Symbol
VDSS
VGSS ID IDP IDR IDRP Pd
Tj ; Tstg
Limits
60 ±20 200 800 200 800
300(total)
1550
-55~+150
(Note 1)
(Note 1) (Note 2) (Note 3)
Note : 1.
Pulse test, pulse width≤300μs, duty≤2%
2.
200mW per element must not be exceeded.
3.
Human body model, 1.
5kΩ in series with 100pF
Unit
V
mA
mW
V
°C
Electrical Characteristics (Ta=25°C)
Symbol Min.
Typ.
Max.
BVDSS*
60
-
-
VGS(th) 1 1.
2 2
IGSS - - ±10
IDSS - - 1
- 3.
2 5
- 3.
2 5
RDS(ON)*
-
24
- 24
- 1.
5 3
GFS
100 240
-
Ciss - 30.
6 -
Coss - 5.
5 -
Crss - 4 -
td(ON) - 3 -
tr - 5 -
td(OFF) - 14 -
tf - 9 -
Qg - 1.
1 -
Qgs - 0.
1 -
Qgd - 0.
23 -
Unit V μA
Ω mS pF
ns
nC
Test Conditions VGS=0, ID=10μA VDS=VGS, ID=250μA VGS=±20V, VDS=0 VDS=60V, VGS=0 ID=1mA, VGS=2.
5V ID=...
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