PNP GENERAL PURPOSE DUALTRANSISTORS
Description
BC857BS
PNP GENERAL PURPOSE DUALTRANSISTORS
VOLTAGE 45 Volts
POWER 150 mWatts
FEATURES
• General purpose amplifier applications • NPN epitaxial silicon, planar design • In compliance with EU RoHS 2002/95/EC directives
MECHANICAL DATA
• Case: SOT-363, Plastic • Terminals: Solderable per MIL-STD-750, Method 2026 • Approx.
Weight: 0.
008 gram • Marking : 57S
ABSOLUTE MAXIMUM RATINGS
PARAMETER Collector - Emitter Voltage Collector - Base Voltage Emitter - Base Voltage Collector Current - Continuous
THERMAL CHARACTERISTICS
PARAMETER Total Device Dissipation Per Device FR-5 Board (Note 1)T =25OC
A
Derate above 25OC Thermal Resistance , Junction to Ambient Junction Temperature Storage Temperature
Note 1: FR-4 board 70 x 60 x 1mm.
REV.
0.
1-MAR.
4.
2009
Symbol VCEO VCBO VEBO IC
Value -45 -50 -5.
0 100
Units V V V
mA
Symbol P
D
RθJA TJ TSTG
Value 300 150 3.
0 328
-55 to 150
-55 to 150
Units mW mW/OC O C/W
OC
OC
PAGE .
1
BC857BS
ELECTRICAL CHARACTERISTICS (TJ=25OC, unless otherwise noted)
PA RA ME TE R
OF F C HA RA C TE RIS TIC S Collector - Emitter Breakdown Voltage Collector - Emitter Breakdown Voltage Collector - Base Breakdown Voltage
Emitter - Base Breakdown Voltage
Collector Cutoff Current
ON C HA RA C TE RIS TIC S
S ym b o l
Te s t C o nd i t i o n
V ( B R ) C E O IC = 1 0 m A
V ( B R ) C E S IC =1 0 uA , V E B =0
V ( B R ) C B O IC = 1 0 uA
V ( B R ) E B O IE = 1 0 uA
IC B O
VC B =30V, VC B =30V, TA =150O C
MIN.
TYP.
MA X .
Uni t
-45 - - V
-50 -
-
-50 - - V
-5.
0
-
-
V
-
-
-15 -5.
0
nA uA
DC Current Gain
hF E
IC =1 0 uA , V C E =5 V
200 420
150
-
-
DC Current Gain
h FE
I =2.
0mA, V =5V C CE
Collector - Emitter Saturation Voltage Base - Emitter Saturation Voltage Base - Emitter Voltage
VC E (S AT) VB E (S AT) VB E (S AT)
IC =1 0 mA , IB =0 .
5 mA IC =1 0 0 mA , IB =5 .
0 mA
IC =1 0 mA , IB =0 .
5 mA IC =1 0 0 mA , IB =5 .
0 mA
IC =2 mA , V C E =5 .
0 V IC =1 0 mA , V C E =5 .
0 V
S MA L L -S IGNA L C HA RA C TE RIS TIC S
-
150
475 ...
Similar Datasheet
