NPN Silicon Planar Medium Power Transistor
Description
SMD Type
Transistors
0.
1max +0.
050.
90
-0.
05
+0.
151.
65 -0.
15
NPN Silicon Planar Medium Power Transistor FZT657
Features
Low saturation voltage
SOT-223
6.
50+0.
2 -0.
2
Unit: mm 3.
50+0.
2
-0.
2
3.
00+0.
1 -0.
1 4
0.
90+0.
2 -0.
2
7.
00+0.
3 -0.
3
123 2.
9 4.
6
0.
70+0.
1 -0.
1
1 Base 2 Collector 3 Emitter 4 Collector
Absolute Maximum Ratings Ta = 25
Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Peak Pulse Current Continuous Collector Current Power Dissipation at Tamb=25 Operating and Storage Temperature Range
Symbol VCBO VCEO VEBO ICM IC Ptot Tj:Tstg
Rating 300 300 5 1 0.
5 2
-55 to +150
Unit V V V A A W
Electrical Characteristics Ta = 25
Parameter Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-Off Current Emitter Cut-Off Current Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Base-Emitter Turn-On Voltage
Static Forward Current Transfer Ratio
Transition Frequency Output Capacitance
Symbol V(BR)CBO V(BR)CEO V(BR)EBO
ICBO IEBO VCE(sat) VBE(sat) VBE(on)
hFE
fT Cobo
Testconditons IC=100ìA IC=10mA* IE=100ìA VCB=200V VEB=3V IC=100mA, IB=10mA* IC=100mA, IB=10mA* IC=100mA, VCE =5V* IC=10mA, VCE =5V* IC=100mA, VCE =5V* IC=10mA, VCE =20V,f=20MHz VCB =20V, f=1MHz
* Measured under pulsed conditions.
Pulse Width=300ìs.
Duty cycle 2%
Marking
Marking
FZT657
Min Typ.
Max Unit 300 V 300 V
5V 0.
1 ìA 0.
1 ìA 0.
5 V 1.
0 V 1.
0 V
40 50 30 MHz
20 pF
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