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CS3N80FA9

HUAJING MICROELECTRONICS

Silicon N-Channel Power MOSFET


Description
Silicon N-Channel Power MOSFET CS3N80F A9 ○R General Description: CS3N80F A9, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance VDSS ID PD(TC=25℃) RDS(ON)Typ 800 3 30 4.0 the avalanche energy. The transistor can be used in various power...



HUAJING MICROELECTRONICS

CS3N80FA9

PDF File CS3N80FA9 PDF File


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