NPN SILICON RF TRANSISTOR
Description
DATA SHEET
NPN SILICON RF TRANSISTOR
2SC5751
NPN SILICON RF TRANSISTOR FOR MEDIUM OUTPUT POWER AMPLIFICATION (30 mW)
FLAT-LEAD 4-PIN THIN-TYPE SUPER MINIMOLD
FEATURES • Ideal for medium output power amplification • PO (1 dB) = 15.
0 dBm TYP.
@ VCE = 2.
8 V, f = 1.
8 GHz, Pin = 1 dBm • HFT3 technology (fT = 12 GHz) adopted • High reliability through use of gold electrodes • Flat-lead 4-pin thin-type super minimold package
ORDERING INFORMATION
Part Number 2SC5751 2SC5751-T2
Quantity 50 pcs (Non reel) 3 kpcs/reel
Supplying Form • 8 mm wide embossed taping • Pin 1 (Emitter), Pin 2 (Collector) face the perforation side of the tape
Remark To order evaluation samples, consult your NEC sales representative.
Unit sample quantity is 50 pcs.
ABSOLUTE MAXIMUM RATINGS (TA = +25°C)
Parameter Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current Total Power Dissipation Junction Temperature Storage Temperature
Symbol VCBO VCEO VEBO IC P Note
tot
Tj Tstg
Ratings 9.
0 6.
0 2.
0 50 205 150
−65 to +150
Note Mounted on 1.
08 cm2 × 1.
0 mm (t) glass epoxy PCB
Unit V V V mA
mW °C °C
Because this product uses high-frequency technology, avoid excessive static electricity, etc.
The information in this document is subject to change without notice.
Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country.
Please check with local NEC representative for availability and additional information.
Document No.
P15657EJ1V0DS00 (1st edition) Date Published August 2001 NS CP(K) Printed in Japan
©
2001
2SC5751
THERMAL RESISTANCE
Parameter Junction to Ambient Resistance
Symbol R Note
th j-a
Value 600
Note Mounted on 1.
08 cm2 × 1.
0 mm (t) glass epoxy PCB
Unit °C/W
ELECTRICAL CHARACTERISTICS (TA = +25°C)
Parameter
Symbol
Test Conditions
DC Characteristics
Collector Cut-off Current
ICBO VCB = 5 V, IE = 0 mA
Emitter Cut-off Current DC Current Gain
IEBO h Note 1
FE
VBE = 1 V...
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