NPN EPITAXIAL SILICON TRANSISTOR
Description
RoHS 2SD780/2SD780A
SOT-23-3L
2SD780/2SD780A DFEATURES Power dissipation
TRANSISTOR (NPN)
1.
BASE 2.
EMITTER 3.
COLLECTOR
TPCM: 0.
2 W (Tamb=25℃)
1.
02
.
,LCollector current
0.
95¡ À0.
025
0.
35 2.
92¡ À0.
05
ICM: 0.
3 Collector-base voltage
A
OV(BR)CBO:
V(BR)CBO:
60 V 2SD780 80 V 2SD780A
1.
9
COperating and storage junction temperature range
TJ, Tstg: -55℃ to +150℃ ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
ICParameter
Symbol
Test conditions
MIN
NCollector-base breakdown voltage OCollector-emitter breakdown voltage
V(BR)CBO V(BR)CEO
Ic=0.
1mA, IE=0 Ic=1mAIB=0
2SD780 2SD780A
2SD780 2SD780A
60 80 60 80
Emitter-base breakdown voltage
V(BR)EBO
IE=0.
1mA, IC=0
5
RCollector cut-off current
ICBO VCB=50V, IE=0
TEmitter cut-off current
IEBO VEB=5V, IC=0
ECDC current gain
hFE(1) hFE(2)
VCE=1V, IC=50mA VCE=2V, IC=300mA
110 30
LCollector-emitter saturation voltage
VCE(sat)
IC=300mA, IB=30mA
Base-emitter voltage
VBE
VCE=6V, IC=10mA
0.
6
ETransition frequency
fT VCE=6V, IC=10mA
JCollector output capacitance
Cob VCB=6V, IE=0, f=1MHz
2.
80¡ À0.
05 1.
60¡ À0.
05
TYP MAX UNIT V V V
0.
1 µA 0.
1 µA 400
0.
6 V 0.
7 V 140 MHz 7 pF
ECLASSIFICATION OF hFE(1) W Rank
Range
110-180
135-220
170-270
200-320
250-400
Marking
2SD780 2SD780A
DW1 D51
DW2 D52
DW3 D53
DW4 D54
DW5 D55
WEJ ELECTRONIC CO.
Http:// www.
wej.
cn E-mail:wej@yongerjia.
com
...
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