NPN EPITAXIAL SILICON TRANSISTOR
Description
RoHS
2SD602LT1
NPN EPITAXIAL SILICON TRANSISTOR
GENERAL PURPOSE TRANSISTOR
* Complement to MMBT2907ALT1 * Collector Dissipation: Pc(max)=225mW * Collector-Emitter Voltage :Vceo= 40V
DABSOLUTE MAXIMUM RATINGS at Ta=25
Characteristic
Symbol Rating Unit
TCollector-Base Voltage
Vcbo 75 V
.,LCollector-Emitter Voltage
Vceo
40
V
2.9 1.9 0.95 0.95 0.4
E...
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