IGBT
Description
Replaces DS5524-2.
3
DIM400PBM17-A000
IGBT Bi-Directional Switch Module
DS5524-3 November 2010 (LN27710)
FEATURES
10µs Short Circuit Withstand High Thermal Cycling Capability Non Punch Through Silicon Isolated AlSiC Base with AlN Substrates Lead Free construction
KEY PARAMETERS
VDRM VT* IC IC(PK)
(typ) (max) (max)
±1700V 4.
9V 400A 800A
* Measured at the power busbars, not the auxiliary terminals
APPLICATIONS
Matrix Converters
Brushless Motor Controllers
Frequency Converters
The Powerline range of high power modules includes half bridge, chopper, dual, single and bi-directional switch configurations covering voltages from 1200V to 6500V and currents up to 2400A.
The DIM400PBM17-A000 is a bi-directional switch 1700V, n-channel enhancement mode, insulated gate bipolar transistor (IGBT) module.
The IGBT has a wide reverse bias safe operating area (RBSOA) plus 10μs short circuit withstand.
This device is optimised for applications requiring high thermal cycling capability.
The module incorporates an electrically isolated base plate and low inductance construction enabling circuit designers to optimise circuit layouts and utilise grounded heat sinks for safety.
1(E1/E2) 2(C1)
5(E1) 4(G1)
3(C2)
6(G2) 7(E2)
Fig.
1 Circuit configuration
ORDERING INFORMATION
Order As:
DIM400PBM17-A000
Note: When ordering, please use the complete part number
Outline type code: P
(See Fig.
11 for further information) Fig.
2 Package
Caution: This device is sensitive to electrostatic discharge.
Users should follow ESD handling procedures
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dynexsemi.
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DIM400PBM17-A000
ABSOLUTE MAXIMUM RATINGS
Stresses above those listed under ‘Absolute Maximum Ratings’ may cause permanent damage to the device.
In extreme conditions, as with all semiconductors, this may include potentially hazardous rupture of the package.
Appropriate safety precautions should always be followed.
Exposure to Absolute Maximum Ratings may affect device reliability.
Tcase = 25°C unless stated ...
Similar Datasheet
- DIM400PBM17-A000 IGBT - Dynex
