Dual Switch IGBT
Description
Replaces DS5616-2.
1
DIM400GDM33-F000
Dual Switch IGBT Module
DS5616-3 February 2014 (LN31315)
FEATURES
10µs Short Circuit Withstand High Thermal Cycling Capability Soft Punch Through Silicon Isolated AlSiC Base with AlN Substrates Lead Free construction
APPLICATIONS
High Reliability Inverters Motor Controllers Traction Drives Choppers
The Powerline range of high power modules includes half bridge, chopper, dual, single and bi-directional switch configurations covering voltages from 1200V to 6500V and currents up to 2400A.
The DIM400GDM33-F000 is a single switch 3300V, nchannel enhancement mode, insulated gate bipolar transistor (IGBT) module.
The IGBT has a wide reverse bias safe operating area (RBSOA) plus 10μs short circuit withstand.
This device is optimised for traction drives and other applications requiring high thermal cycling capability.
The module incorporates an electrically isolated base plate and low inductance construction enabling circuit designers to optimise circuit layouts and utilise grounded heat sinks for safety.
KEY PARAMETERS
VCES VCE(sat) * (typ) IC (max) IC(PK) (max)
3300V 2.
8V 400A 800A
* Measured at the auxiliary terminals
7(E1) 6(G1)
1(E1)
2(C)
10(C2) 9(G2)
5(C1)
3(C1)
4(E2)
8(E2)
Fig.
1 Circuit configuration
ORDERING INFORMATION
Order As:
DIM400GDM33-F000
Note: When ordering, please use the complete part number
Outline type code: G
(See Fig.
11 for further information) Fig.
2 Package
Caution: This device is sensitive to electrostatic discharge.
Users should follow ESD handling procedures
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DIM400GDM33-F000
ABSOLUTE MAXIMUM RATINGS
Stresses above those listed under ‘Absolute Maximum Ratings’ may cause permanent damage to the device.
In extreme conditions, as with all semiconductors, this may include potentially hazardous rupture of the package.
Appropriate safety precautions should always be followed.
Exposure to Absolute Maximum Ratings may affect device reliability.
Tcase = 25°C u...
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