N-Channel MOSFET
Description
SDU/D04N60Green
Product
Sa mHop Microelectronics C orp.
Ver 2.
2
N-Channel Logic Level Enhancement Mode Field Effect Transistor
PRODUCT SUMMARY VDSS ID RDS(ON) (Ω) Typ
600V 4A 2.
1 @ VGS=10V
FEATURES Super high dense cell design for low RDS(ON).
Rugged and reliable.
Suface Mount Package.
D
G S
SDU SERIES TO-252(D-PAK)
G DS
SDD SERIES TO-251S(I-PAK)
G DS
SDD SERIES TO-251L(I-PAK)
ORDERING INFORMATION
Ordering Code
Package
SDU04N60HZ
TO-252
Marking Code SDU04N60
Delivery Mode Reel
RoHS Status Halogen Free
SDD04N60HS
TO-251S
SDD04N60
Tube
Halogen Free
SDD04N60HL
TO-251L
SDD04N60
Tube
Halogen Free
ABSOLUTE MAXIMUM RATINGS (TC=25°C unless otherwise noted)
Symbol Parameter
VDS Drain-Source Voltage VGS Gate-Source Voltage
ID
Drain Current-Continuous a e
TC=25°C TC=100°C
IDM -Pulsed b
EAS Single Pulse Avalanche Energy d
PD
Maximum Power Dissipation
TC=25°C TC=100°C
Limit 600 ±30
4 2.
8 11.
8 51 83 42
Units V V A A A mJ W W
TJ, TSTG
Operating Junction and Storage Temperature Range
-55 to 175
°C
THERMAL CHARACTERISTICS
R JC
Thermal Resistance, Junction-to-Case
R JA
Thermal Resistance, Junction-to-Ambient
1.
8 °C/W 50 °C/W
Details are subject to change without notice.
1
May,20,2014
www.
samhop.
com.
tw
SDU/D04N60
Ver 2.
2
ELECTRICAL CHARACTERISTICS (TC=25°C unless otherwise noted)
4 Symbol Parameter
Conditions
Min
OFF CHARACTERISTICS BVDSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current IGSS Gate-Body Leakage Current
VGS=0V , ID=250uA VDS=480V , VGS=0V VGS= ±30V , VDS=0V
600
ON CHARACTERISTICS
VGS(th)
Gate Threshold Voltage
RDS(ON) Drain-Source On-State Resistance
gFS Forward Transconductance
VDS=VGS , ID=250uA VGS=10V , ID=2A VDS=20V , ID=2A
2
DYNAMIC CHARACTERISTICS c
CISS Input Capacitance
COSS
Output Capacitance
CRSS
Reverse Transfer Capacitance
VDS=25V,VGS=0V f=1.
0MHz
SWITCHING CHARACTERISTICS c
tD(ON)
Turn-On Delay Time
tr Rise Time
tD(OFF)
Turn-Off Delay Time
tf Fall Time
Qg To...
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