Silicon Carbide Power MOSFET
Description
VDS
1200 V
C2M0025120D
Silicon Carbide Power MOSFET TM
C2M MOSFET Technology
ID @ 25˚C RDS(on)
63 A 25 mΩ
N-Channel Enhancement Mode
Features
Package
High Blocking Voltage with Low On-Resistance High Speed Switching with Low Capacitances Easy to Parallel and Simple to Drive Avalanche Ruggedness Resistant to Latch-Up Halogen Free,...
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