Schottky Rectifier
Description
www.
vishay.
com
VS-110CNQ045APbF Series
Vishay Semiconductors
High Performance Schottky Rectifier New Generation 3 D-61 Package, 2 x 55 A
VS-110CNQ045APbF
D-61-8 VS-110CNQ045ASMPbF
Base common cathode
12 Anode Common
1 cathode
3 Anode
2
D-61-8-SM VS-110CNQ045ASLPbF
12 Anode Common
1 cathode
3 Anode
2
Base common cathode
D-61-8-SL
1 Anode
1
3 Anode
2
PRODUCT SUMMARY
Package IF(AV) VR
VF at IF IRM max.
TJ max.
Diode variation
EAS
D-61 2 x 55 A
45 V 0.
54 V 350 mA at 125 °C 150 °C Common cathode 54 mJ
FEATURES
• 150 °C TJ operation • Center tap module
Available
• Very low forward voltage drop
Available
• High frequency operation
• High power discrete
• High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance
• Guard ring for enhanced ruggedness and long term reliability
• New fully transfer-mold low profile, small footprint, high current package
• Designed and qualified for industrial level
• Material categorization: for definitions of compliance please see www.
vishay.
com/doc?99912
Note
* This datasheet provides information about parts that are
RoHS-compliant and/or parts that are non-RoHS-compliant.
For example, parts with lead (Pb) terminations are not RoHS-compliant.
Please see the information/tables in this datasheet for details.
DESCRIPTION
The center tap Schottky rectifier module has been optimized for very low forward voltage drop, with moderate leakage.
The proprietary barrier technology allows for reliable operation up to 150 °C junction temperature.
Typical applications are in switching power supplies, converters, freewheeling diodes, and reverse battery protection.
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL
CHARACTERISTICS
IF(AV)
Rectangular waveform
VRRM
IFSM
tp = 5 μs sine
VF 55 Apk, TJ = 125 °C (per leg) TJ Range
VALUES 110 45 5400 0.
5
-55 to +150
UNITS A V A V °C
VOLTAGE RATINGS
PARAMETER Maximum DC reverse voltage Maximum working peak reverse voltage
S...
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