Low VF SMD Schottky Barrier Diode
Description
Small Signal Product
BAS40 / -04 / -05 / -06
Taiwan Semiconductor
Low VF SMD Schottky Barrier Diode
FEATURES
- Metal-on-silicon schottky barrier - Surface device type mounting - Moisture sensitivity level 1 - Matte Tin(Sn) lead finish with Nickel(Ni) underplate - Packing code with suffix "G" means
green compound (halogen-free)
MECHANICAL DATA
- Case: SOT- 23, molded plastic - Terminal: Matte tin plated, lead free,
solderable per MIL-STD-202, Method 208 guaranteed - High temperature soldering guaranteed: 260oC/10s - Weight: 0.
008g (approximately)
SOT-23
MAXIMUM RATINGS AND ELECTRICAL CHARACTERSTICS (TA=25℃ unless otherwise noted)
PARAMETER
SYMBOL
VALUE
Power Dissipation
PD 200
Repetitive Peak Reverse Voltage
VRRM
40
Reverse Voltage
VR 40
Repetitive Peak Forward Current
IFRM
200
Mean Forward Current
IO 200
Non-Repetitive Peak Forward Surge Current
(Note 1)
IFSM
0.
6
Thermal Resistance (Junction to Ambient)
(Note 2)
RθJA
357
Junction and Storage Temperature Range
TJ , TSTG
-65 to +125
PARAMETER
SYMBOL
Reverse Breakdown Voltage
IR=10μA
V(BR)
IF=1mA
Forward Voltage
IF=10mA
VF
IF=40mA
Reverse Leakage Current
VR=30V
IR
Junction Capacitance
VR=1V, f=1.
0MHz
CJ
Reverse Recovery Time
IF=IR=10mA, RL=100Ω, IRR=1mA
trr
Notes : 1.
Test Condition : 8.
3ms single half sine-wave superimposed on rated load
Notes : 2.
Valid provided that electrodes are kept at ambient temperature
MIN 40
-
MAX -
0.
38 0.
50 1.
00 0.
2 5.
0 5.
0
UNIT mW
V V mA mA A oC/W oC
UNIT V
V
μA pF ns
Document Number: DS_S1412006
Version: F14
Small Signal Product
RATINGS AND CHARACTERISTICS CURVES
(TA=25℃ unless otherwise noted) Fig.
1 Power Derating Curve
200
BAS40 / -04 / -05 / -06
Taiwan Semiconductor
Fig.
2 Maximum Non-Repetitve Peak Forward Surge Current Per Leg
600 8.
3 ms single half sine wave
Peak Forward Surge Current (mA)
PD - Power Dissipation (mW)
100 300
Instantaneous Forward Current (mA)
0 0
25 50 75 100 TA - Ambient Temperature (oC)
125
Fig.
3...
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