N-Channel 100-V (D-S) MOSFET
Description
MSB90N10
N-Channel 100-V (D-S) MOSFET
Description The MSB90N10 is a N-channel enhancement-mode MOSFET , providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness.
The TO-263 package is universally preferred for all commercial-industrial applications Features • Low rDS(on) trench technology • Low thermal impedance • Fast switching speed • RoHS compliant package Application • White LED boost converters • Automotive Systems • Industrial DC/DC Conversion Circuits Packing & Order Information 3,000/Reel
Graphic symbol
Publication Order Number: [MSB90N10]
© Bruckewell Technology Corporation Rev.
A -2014
MSB90N10
N-Channel 100-V (D-S) MOSFET
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Absolute Maximum Ratings (TA=25°C unless otherwise specified)
Symbol
Parameter
VDS Drain-Source Voltage
VGS Gate-Source Voltage
ID Continuous Drain Currenta (TC=25°C) Continuous Drain Currenta (TC =70°C)
IDM Pulsed Drain Currentb
IS Continuous Source Current (Diode Conduction)a
Power Dissipationa (TC =25°C) PD Power Dissipationa (TC =70°C)
TJ/TSTG
Operating Junction and Storage Temperature
Value 100 ±20 90 90 360 90 300 150 -55 to +175
Unit V V A A A A W W °C
Thermal Resistance Ratings
Symbol
Parameter
RθJA Maximum Junction-to-Ambienta
RθJC Maximum Junction-to-Case
Notes
a.
Package Limited
b.
Pulse width limited by maximum junction temperature c.
Surface Mounted on 1” x 1” FR4 Board.
Maximum 62.
5 0.
5
Units °C/W
Static Symbol
VGS
Parameter Gate Threshold Voltage
Test Conditions VDS = VGS, ID =-250μA
Min Typ.
Max.
Units 1V
IGSS Gate-Body Leakage
VDS = 0 V , VGS = ±20 V
±100 nA
IDSS ID(on)
Zero Gate Voltage Drain Current On-State Drain CurrentA
VDS = 80 V , VGS = 0 V VDS = 80 V , VGS = 0 V , TJ= 55°C VDS = 5 V, VGS = 10 V
120
1 uA 25
A
RDS(on) gfs
Drain-Source On-ResistanceA Forward TranconductanceA
VGS = 10 V, ID = 45 A VGS = 5.
5 V , ID = 44 A VDS = 15 V , ID = 20 A
7 mΩ 9 22 ...
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