N-Channel 700V MOSFET
Description
MSF11N70
N-Channel 700V MOSFET
Description The MSF11N70 is a N-channel enhancement-mode MOSFET , providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness.
The TO-220F package is universally preferred for all commercial-industrial applications Features • Low On Resistance • Simple Drive Requirement • Low Gate Charge • Fast Switching Characteristic • RoHS compliant package available Packing & Order Information 50/Tube ; 1,000/Box
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MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Absolute Maximum Ratings
Symbol
Parameter
VDS Drain-Source Voltage
VGS Gate-Source Voltage
Continuous Drain Current @ TC=25°C ID
Continuous Drain Current @ TC=100°C
IDM Pulsed Drain Current
IAR Avalanche Current
EAS Single Pulsed Avalanche Energy
EAR Repetitive Avalanche Energy
dv/dt
Peak Diode Recovery dv/dt
Value 700 ±30 1.
1 6.
5 40 10 658 17.
8 4.
5
Unit V V A A A A mJ mJ
V/ns
Publication Order Number: [MSF11N70]
© Bruckewell Technology Corporation Rev.
A -2014
MSF11N70
N-Channel 700V MOSFET
Absolute Maximum Ratings
Symbol
Parameter
Power Dissipation (TC=25°C) PD
Power Dissipation (TC=100°C)
TSTG
Operating and Storage Temperature Range
NOTE:
1.
Repetitive Rating : Pulse width limited by maximum junction temperature 2.
L = 15mH, IAS =9.
0A, VDD = 50V, RG = 25Ω , Starting TJ = 25°C 3.
ISD ≤ 11.
0A, di/dt ≤ 200A/us, VDD ≤ BVDSS, Starting TJ = 25°C 4.
Pulse Test : Pulse Width ≤ 300μs, Duty Cycle ≤ 2%
5.
Essentially Independent of Operating Temperature
Static Characteristics
Symbol
Test Conditions
VGS VDS = VGS, ID = 250μA
*RDS(ON) BVDSS △BVDSS /△TJ
VGS = 10 V , ID = 5.
0 A VGS = 0 V , ID = 250μA ID = 250μA, Referenced to 25°C
IDSS IGSSF
VDS = 700 V , VGS = 0 V VDS = 560 V , VGS = 0 V , Tj = 125°C VDS = 30 V, VDS = 0 V
IGSSR
VDS = -30 V, VDS = 0 V
Value 35 0.
30
-55 to +150
Min Typ.
2.
0 -- 0.
9 700 --
0.
6 -- --
-- --
Unit W
W/°C °C
Max.
4.
5 1.
2 --
Units V mΩ V
1 10 100
-100
...
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