EPITAXIAL PLANAR NPN TRANSISTOR
Description
SEMICONDUCTOR
TECHNICAL DATA
GENERAL PURPOSE APPLICATION.
SWITCHING APPLICATION.
FEATURES Low Leakage Current : ICEX=10nA(Max.
) ; VCE=60V, VEB(OFF)=3V.
Low Saturation Voltage : VCE(sat)=0.
3V(Max.
) ; IC=150mA, IB=15mA.
Complementary to the KTN2907S/2907AS.
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC
RATING
SYMBOL
UNIT
KTN2222S KTN2222AS
Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation
(Ta=25 ) Junction Temperature
VCBO VCEO VEBO
IC
PC
Tj
60 75 30 40 56
600
350
150
V V V mA
mW
Storage Temperature Range
Tstg
-55 150
Note : PC* : Package Mounted on 99.
5% alumina 10 8 0.
6mm.
KTN2222S/AS
EPITAXIAL PLANAR NPN TRANSISTOR
E L BL
DIM MILLIMETERS A 2.
93+_ 0.
20
B 1.
30+0.
20/-0.
15
A G H
D
23
C 1.
30 MAX D 0.
40+0.
15/-0.
05
E 2.
40+0.
30/-0.
20 1 G 1.
90
H 0.
95
J 0.
13+0.
10/-0.
05
K 0.
00 ~ 0.
10 Q
PP
L 0.
55
M 0.
20 MIN
N 1.
00+0.
20/-0.
10
C N K J
P7
Q 0.
1 MAX
M
1.
EMITTER 2.
BASE 3.
COLLECTOR
SOT-23
Marking
Type Name
ZB
Lot No.
ZGType Name
Lot No.
MARK SPEC TYPE
KTN2222S KTN2222AS
MARK ZB ZG
1999.
5.
4
Revision No : 2
1/5
KTN2222S/AS
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC
SYMBOL
TEST CONDITION
Collector Cut-off Current Collector Cut-off Current
KTN2222AS KTN2222S KTN2222AS
ICEX ICBO
VCE=60V, VEB(OFF)=3V VCB=50V, IE=0 VCB=60V, IE=0
Emitter Cut-off Current
KTN2222AS
IEBO
VEB=3V, IC=0
Collector-Base Breakdown Voltage
KTN2222S KTN2222AS
V(BR)CBO IC=10 A, IE=0
Collector-Emitter Breakdown Voltage
* KTN2222S V(BR)CEO IE=10mA, IB=0
KTN2222AS
Emitter-Base Breakdown Voltage
DC Current Gain
KTN2222S KTN2222AS
KTN2222S KTN2222AS *
KTN2222S KTN2222AS
V(BR)EBO IE=10 A, IC=0
hFE(1) hFE(2) hFE(3) hFE(4)
IC=0.
1mA, VCE=10V IC=1mA, VCE=10V IC=10mA, VCE=10V IC=150mA, VCE=10V
hFE(5) IC=500mA, VCE=10V
Collector-Emitter Saturation Voltage
KTN2222S * KTN2222AS
KTN2222S KTN2222AS
VCE(sat)1 IC=150mA, IB=15mA VCE(sat)2 IC=500mA, IB=50mA
Base-Emitter Saturation Voltage
KTN2222S...
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