STS10P3LLH6
Datasheet
P-channel -30 V, 10 mΩ typ., -12.5 A, STripFET H6 Power MOSFET in an SO-8 package
5 8
4 1 SO-8
D(5, 6, 7, 8)
G(4)
S(1, 2, 3)
AM01475v4
Features
Order code
VDS
STS10P3LLH6
-30 V
Very low on-resistance Very low gate charge High avalanche ruggedness Low gate drive power loss
RDS(on) max. 12 mΩ
ID -12.5 A
Applications
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