N-Channel MOSFET
Description
HRD13N10K_HRU13N10K
HRD13N10K / HRU13N10K
100V N-Channel Trench MOSFET
FEATURES
Originative New Design Superior Avalanche Rugged Technology Excellent Switching Characteristics Unrivalled Gate Charge : 20 nC (Typ.
) Extended Safe Operating Area Lower RDS(ON) : 85 Pȍ (Typ.
) @VGS=10V Lower RDS(ON) : 135 Pȍ (Typ.
) @VGS=4.
5V Built-in ESD Diode 100% Avalanche Tested
Jan 2015
BVDSS = 100 V RDS(on) typ = 85 Pȍ ID = 3.
5 A
D-PAK I-PAK
2
1 3
HRD13N10K
1
2 3
HRU13N10K
1.
Gate 2.
Drain 3.
Source
Absolute Maximum Ratings TC=25 unless otherwise specified
Symbol
Parameter
Value
VDSS
ID
IDM VGS EAS IAR
PD
Drain-Source Voltage
Drain Current Drain Current Drain Current
– Continuous (TC = 25)
– Continuous (TC = 70)
– Pulsed
(Note 1)
Gate-Source Voltage
Single Pulsed Avalanche Energy
(Note 2)
Avalanche Current
(Note 1)
Power Dissipation (TA = 25)*
Power Dissipation (TC = 25) - Derate above 25
100 3.
5 2.
8 14.
0 ρ16 40 3.
5 2.
5 37 0.
3
TJ, TSTG TL
Operating and Storage Temperature Range Maximum lead temperature for soldering purposes, 1/8” from case for 5 seconds
-55 to +150 300
Thermal Resistance Characteristics
Symbol
Parameter
RșJC RșJA
Junction-to-Case Junction-to-Ambient*
RșJA Junction-to-Ambient
* When mounted on the minimum pad size recommended (PCB Mount)
Typ.
----
Max.
3.
4 50 110
Units V A A A V mJ A W W
W/
Units
/W
క͑΄Ͷ;ͺΈ͑Ͷ·͟Ͳͣ͝ͻΒΟ͑ͣͦ͑͢͡
HRD13N10K_HRU13N10K
Electrical Characteristics TJ=25 qC unless otherwise specified
Symbol
Parameter
Test Conditions
Min Typ Max Units
On Characteristics
VGS RDS(ON)
Gate Threshold Voltage
Static Drain-Source On-Resistance
VDS = VGS, ID = 250 Ꮃ VGS = 10 V, ID = 3.
5 A VGS = 4.
5 V, ID = 2.
0 A
1.
2 ---
Off Characteristics
BVDSS IDSS IGSS
Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage Current
VGS = 0 V, ID = 250 Ꮃ VDS = 80 V, VGS = 0 V VDS = 80 V, TJ = 125 VGS = ρ16 V, VDS = 0 V
100 ----
Dynamic Characteristics
Ciss Input Capacitanc...
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