N-channel Power MOSFET
Description
STF24N60M2
Datasheet
N-channel 600 V, 168 mΩ typ.
, 18 A MDmesh M2 Power MOSFET in a TO-220FP package
23 1 TO-220FP D(2)
G(1)
Features
Order code
VDS @TJmax
RDS(on) max.
STF24N60M2
650 V
190 mΩ
• Extremely low gate charge • Excellent output capacitance (Coss) profile • 100% avalanche tested • Zener-protected
Applications
• Switching applications • LCC converters • Resonant converters
ID 18 A
Description
This device is an N-channel Power MOSFET developed using MDmesh M2 S(3) AM15572v1_no_tab technology.
Thanks to its strip layout and an improved vertical structure, the device
exhibits low on-resistance and optimized switching characteristics, rendering it suitable for the most demanding high efficiency converters.
Product status link STF24N60M2
Product summary
Order code
STF24N60M2
Marking
24N60M2
Package
TO-220FP
Packing
Tube
DS9402 - Rev 7 - February 2020 For further information contact your local STMicroelectronics sales office.
www.
st.
com
STF24N60M2
Electrical ratings
1 Electrical ratings
Table 1.
Absolute maximum ratings
Symbol
Parameter
VGS Gate-source voltage
ID (1)
Drain current (continuous) at TC = 25 °C Drain current (continuous) at TC = 100 °C
IDM (2)
Drain current (pulsed)
PTOT
Total power dissipation at TC = 25 °C
dv/dt (3)
Peak diode recovery voltage slope
dv/dt (4)
MOSFET dv/dt ruggedness
VISO
Insulation withstand voltage (RMS) from all three leads to external heat sink (t = 1 s; TC = 25 °C)
Tstg Storage temperature range
Tj Operating junction temperature range
1.
Limited by maximum junction temperature.
2.
Pulse width limited by safe operating area.
3.
ISD ≤ 18 A, di/dt ≤ 400 A/µs; VDS(peak) < V(BR)DSS, VDD = 400 V 4.
VDS ≤ 480 V
Symbol Rthj-case Rthj-amb
Table 2.
Thermal data Parameter Thermal resistance junction-case Thermal resistance junction-ambient
Value ±25 18 12 72 30 15 50 2.
5
-55 to 150
Value 4.
2 62.
5
Unit V A A A W
V/ns V/ns kV
°C
Unit °C/W °C/W
Symbol IAR EAS
Table 3.
Avalanche characterist...
Similar Datasheet
