N-CHANNEL MOSFET
Description
N R N-CHANNEL MOSFET
JCS630A
MAIN CHARACTERISTICS
Package
ID 9.
0 A VDSS 200 V Rdson（Vgs=10V） 0.
4 Ω Qg 22 nC
APPLICATIONS z High efficiency switch
mode power supplies z Electronic lamp ballasts
based on half bridge z UPS
z z Crss ( 22pF) z z z dv/dt zRoHS
FEATURES zLow gate charge zLow Crss (typical 22pF ) zFast switching z100% avalanche tested zImproved dv/dt capability zRoHS product
ORDER MESSAGE
Order codes
Marking
JCS630VA-O-V-N-B JCS630VA
JCS630RA-O-R-N-B JCS630RA
JCS630RA-O-R-N-A JCS630RA
JCS630SA-O-S-N-B JCS630SA
JCS630BA-O-B-N-B JCS630BA
JCS630CA-O-C-N-B JCS630CA
JCS630FA-O-F-N-B JCS630FA
Package IPAK DPAK DPAK TO-263 TO-262 TO-220C TO-220MF
Halogen Free NO NO NO NO NO NO NO
Packaging Tube Tube Brede Tube Tube Tube Tube
Device Weight 0.
35 g(typ) 0.
30 g(typ) 0.
30 g(typ) 1.
37 g(typ) 1.
71 g(typ) 2.
15 g(typ) 2.
20 g(typ)
：201110B
1/16
R
ABSOLUTE RATINGS (Tc=25℃)
JCS630A
Parameter
Symbol
JCS630VA/RA
Value JCS630SA/BA/CA
－ Drain-Source Voltage
VDSS
200
Drain Current -continuous
ID T=25℃ T=100℃
9.
0 5.
7
（ 1）
Drain Current - pulse （note 1）
IDM
36
Gate-Source Voltage
VGSS
±30
（ 2）
Single Pulsed Avalanche Energy（note 2）
EAS
160
（ 1） Avalanche Curren（t note 1）
IAR
9.
0
（ 1）
Repetitive Avalanche Current（note 1）
EAR
7.
2
（ 3） Peak Diode Recovery dv/dt
dv/dt
5.
5
（note 3）
Power Dissipation
PD TC=25℃ -Derate above
48 0.
39
72 0.
57
25℃
Operating and Storage Temperature Range
TJ，TSTG
-55～+150
Maximum Lead Temperature for Soldering
TL
300
Purposes
* *Drain current limited by maximum junction temperature
JCS630FA 9.
0* 5.
7* 36*
38 0.
3
Unit V A A A V mJ A mJ
V/ns W
W/℃
℃
℃
：201110B
2/16
R
ELECTRICAL CHARACTERISTICS
JCS630A
Parameter
Symbol Tests conditions Min Typ Max Units
Off –Characteristics
－ Drain-Source Voltage
BVDSS ID=250μA, VGS=0V
200 - - V
Breakdown Voltage Temperature Coefficient
ΔBVDSS/Δ ID=250μA, referenced to TJ 25℃
- 0.
2 - V/℃
Ze...
Similar Datasheet
