N-CHANNEL MOSFET
Description
N N-CHANNEL MOSFET
R
JCS3710F
MAIN CHARACTERISTICS
ID 65 A VDSS 100 V Rdson(@Vgs=10V) 17.
5 mΩ Qg 74 nC
Package
z
DC/DC z D
APPLICATIONS z High efficiency switching
DC/DC converters and switch mode power supply z DC Motor control and Class D Amplifier
z z Crss z z z dv/dt zRoHS
FEATURES zLow gate charge zLow Crss zFast switching z100% avalanche tested zImproved dv/dt capability zRoHS product
ORDER MESSAGE
Order codes
JCS3710CF-O-C-N-B JCS3710SF-O-S-N-A JCS3710SF-O-S-N-B
Marking
JCS3710CF JCS3710SF JCS3710SF
Package Halogen Free Packaging
TO-220C TO-263 TO-263
NO NO NO
Tube Reel Tube
Device Weight 2.
15 g(typ) 1.
37 g(typ) 1.
37 g(typ)
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ABSOLUTE RATINGS (Tc=25℃)
Parameter - Drain-Source Voltage
Symbol VDSSB B
Drain Current-continuous
IDB
T=25℃
B
T=100℃
( 1) Drain Current – pulse(note 1)
IDMB B
Gate-Source Voltage
VGSSB B
( 2) Single Pulsed Avalanche Energy(note 2)
EASB B
( 1) Avalanche Current(note 1)
IARB B
( 1) Repetitive Avalanche Energy (note 1)
EARB B
( 3) Peak Diode Recovery Dv/dt (note 3)
Power Dissipation
dv/dt
P T =25D CB B B B ℃ -Derate above 25℃
Operating and StorageTemperature Range
T ,TJ STGB B
BB
Maximum LeadTemperature for Soldering Purposes
TLB B
JCS3710F
Value JCS3710CF/SF
100 65 50* 260
±20
800
40
20
5.
0
200
1.
3 -55~+175
Unit V A A A
V
mJ
A
mJ
V/ns
W
W/℃
℃
300 ℃
* *Drain current limited by maximum junction temperature
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ELECTRICAL CHARACTERISTICS
Parameter Off –Characteristics
Symbol
Tests conditions
Min Typ Max Units
- Drain-Source Voltage
BVDSSB B
IBDB=250μA, VBGSB=0V
100 - - V
Breakdown Voltage Temperature Coefficient
ΔBVBDSSB/Δ TJB B
IBDB=1mA,
referenced
to
25℃
- 0.
13 -
V/℃
Zero Gate Voltage Drain Current
IDSSB B
Gate-body leakage current, forward IBGSSFB
VBDSB=100V,VBGSB=0V,TBCB=25℃ VBDSB=80V, TBCB=125℃
VBDSB=0V, VGSB B =20V
-
-
- 1 μA - 100 μA
- 100 nA
Gate-body leakage current, ...
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