Silicon Power Schottky Diode
Description
Silicon Power Schottky Diode
Features • High Surge Capability • Types from 20 V to 40 V VRRM • Isolation Type Package • Electrically Isolated Base Plate • Not ESD Sensitive
MBRT30020 thru MBRT30040R
VRRM = 20 V - 40 V IF(AV) = 300 A
Three Tower Package
Maximum ratings, at Tj = 25 °C, unless otherwise specified ("R" devices have leads reversed)
Parameter
Symbol
Conditions
MBRT30020(R) MBRT30030(R) MBRT30035(R) MBRT30040(R) Unit
Repetitive peak reverse voltage RMS reverse voltage DC blocking voltage Operating temperature Storage temperature
VRRM VRMS VDC
Tj Tstg
20 14 20 -55 to 150 -55 to 150
30 21 30 -55 to 150 -55 to 150
35 25 35 -55 to 150 -55 to 150
40 28 40 -55 to 150 -55 to 150
V V V °C °C
Electrical characteristics, at Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Conditions
MBRT30020(R) MBRT30030(R) MBRT30035(R) MBRT30040(R) Unit
Average forward current (per pkg)
Peak forward surge current (per leg)
Maximum instantaneous forward voltage (per leg)
Maximum instantaneous reverse current at rated DC blocking voltage (per leg)
Thermal characteristics Thermal resistance, junctioncase (per leg)
IF(AV)
TC = 125 °C
IFSM tp = 8.
3 ms, half sine
VF IFM = 150 A, Tj = 25 °C
Tj = 25 °C IR Tj = 100 °C
Tj = 150 °C
RΘJC
300
2000
0.
70 1 10 30
0.
40
300
2000
0.
70 1 10 30
0.
40
300
2000
0.
70 1 10 30
0.
40
300
2000
0.
70 1 10 30
0.
40
A A V mA
°C/W
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1
MBRT30020 thru MBRT30040R
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2
MBRT30020 thru MBRT30040R
Package dimensions and terminal configuration
Product is marked with part number and terminal configuration.
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