N-Channel Enhancement Mode Power MOSFET
Description
Pb Free Product
BLM8205B
N-Channel Enhancement Mode Power MOSFET
Description
The BLM8205B uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.
5V.
This device is suitable for use as a Battery protection or in other Switching application.
General Features
● VDS = 20V,ID = 6A Typ.
RDS(ON) = 16mΩ @ VGS=4.
5V Typ.
RDS(ON) = 19mΩ @ VGS=2.
5V
● High power and current handing capability ● Lead free product is acquired ● Surface mount package
D1 G1
G2
D2
S1 S2
Schematic diagram
Marking and pin assignment
Application
● Battery protection ● Load switch ● Power management
Top view
Package Marking and Ordering Information
Device Marking
Device
Device Package
8205B
BLM8205B
SOT23-6
8205B
BLM8205B
TSSOP-8
Reel Size Ø180mm Ø330mm
Tape width 8mm 12mm
Quantity 3000 units 3000 units
Absolute Maximum Ratings (TA=25℃unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Drain Current-Continuous
ID
Drain Current-Pulsed (Note 1)
IDM
Maximum Power Dissipation
PD
Operating Junction and Storage Temperature Range
TJ,TSTG
Limit
20 ±12
6 25 1.
5 -55 To 150
Unit
V V A A W ℃
Thermal Characteristic
Thermal Resistance,Junction-to-Ambient (Note 2)
RθJA
83 ℃/W
Electrical Characteristics (TA=25℃unless otherwise noted)
Parameter
Symbol
Condition
Off Characteristics
Drain-Source Breakdown Voltage
BVDSS
VGS=0V ID=250μA
Zero Gate Voltage Drain Current
IDSS VDS=20V,VGS=0V
Min Typ Max Unit
20 -
-
V
- - 1 μA
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V2.
2
Gate-Body Leakage Current On Characteristics (Note 3) Gate Threshold Voltage
Drain-Source On-State Resistance
Forward Transconductance Dynamic Characteristics (Note4) Input Capacitance Output Capacitance Reverse Transfer Capacitance Switching Characteristics (Note 4) Turn-on Delay Time Turn-on Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge Drain-Source Diode C...
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