600V N-Channel MOSFET
Description
PPJN1NA60A / PJW1NA60A / PJU1NA60A / PJD1NA60A
600V N-Channel MOSFET
Voltage
600 V Current
1A
Features
RDS(ON), VGS@10V,ID@0.
5A<7.
9Ω High switching speed Improved dv/dt capability Low Gate Charge Low reverse transfer capacitance Lead free in compliance with EU RoHS 2011/65/EU directive.
Green molding compound as per IEC61249 Std.
(Halogen Free)
TO-92
SOT-223
TO-252
TO-251AB
Mechanical Data
Case : TO-251AB, TO-252, SOT-223, TO-92 Package Terminals : Solderable per MIL-STD-750, Method 2026 TO-251AB Approx.
Weight : 0.
0104 ounces, 0.
297grams TO-252 Approx.
Weight : 0.
0104 ounces, 0.
297grams SOT-223 Approx.
Weight : 0.
043 ounces, 0.
123grams TO-92 Approx.
Weight : 0.
007 ounces, 0.
196grams
Maximum Ratings and Thermal Characteristics (TA=25oC unless otherwise noted)
PARAMETER
SYMBOL
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
Single Pulse Avalanche Energy (Note 1)
Power Dissipation
TC=25oC Derate above 25oC
Operating Junction and
Storage Temperature Range
VDS VGS ID IDM EAS
PD
TJ,TSTG
Typical Thermal resistance - Junction to Case - Junction to Ambient
RθJC RθJA
TO-251AB/TO-252 SOT-223 TO-92
600
+30
1 0.
4
4 1.
6
52
28 3.
3 3
0.
22
0.
026
0.
024
-55~150
4.
46 110
37.
9 (Note 4)
140
Limited only By Maximum Junction Temperature
UNITS V V A A mJ W
W/ oC
oC
oC/W
May 5,2014-REV.
01
Page 1
PPJN1NA60A / PJW1NA60A / PJU1NA60A / PJD1NA60A
Electrical Characteristics (TA=25oC unless otherwise noted)
PARAMETER
SYMBOL TEST CONDITION MIN.
TYP.
MAX.
UNITS
Static Drain-Source Breakdown Voltage Gate Threshold Voltage Drain-Source On-State Resistance Zero Gate Voltage Drain Current Gate-Source Leakage Current Diode Forward Voltage Dynamic (Note 5) Total Gate Charge Gate-Source Charge Gate-Drain Charge Input Capacitance Output Capacitance Reverse Transfer Capacitance
BVDSS VGS(th) RDS(on) IDSS IGSS
VSD
VGS=0V,ID=250uA VDS=VGS,ID=250uA VGS=10V,ID=0.
5A VDS=600V,VGS=0V VGS=+30V,VDS=0V IS...
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