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1N5825G

DSI

DIODE


1N5825G
1N5825G

PDF File 1N5825G PDF File


Description
Technical Data DIODE maximum ratings Voltage, Reverse (VR) Voltage, Reverse Peak (VRM) Current at VR = OV (IO) Current Average Rectified (IF) Current Surge Peak (IFM) Current, Surge (IFM) at tp = 8.
3 ms Max.
Power Dissipation (PT) at TC = °C Max.
Thermal Resistance (Rth J-A) Max.
Junction Temperature (TJ) 40.
0 V 48.
0 V empty A 5.
0 A 10.
0 A 250.
0 A empty W 25.
0 °C/W 150.
0 °C NO.
TYPE empty empty CASE empty empty 1N5825G SCHOTTKY empty empty DO-41G GLASS empty PERFORMANCE CHARACTERISTICS at T = 25°C, unless otherwise noted C NO.
SYMBOL CONDITIONS MIN.
MAX.
UNITS 1.
IR VR = 40.
0 V 10.
0 - mA 2.
IR VR = 40.
0 V, TC = 100 °C 75.
0 - mA 3.
VF IF = 3.
0 A (1) - 0.
44 V 4.
VF IF = 5.
0 A (1) - 0.
52 V 5.
6.
7.
8.
9.
10.
11.
12.
13.
14.
15.
16.
17.
18.
19.
20.
Notes (1)pulse-tested tp ≤ 300 µs, duty cycle ≤ 2 % empty empty empty DIMENSIONS in mm Marking 1N5825G Customer GENERAL PURPOSE ...



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