N-CHANNEL POWER MOSFET
Description
UNISONIC TECHNOLOGIES CO.
, LTD
13N50K
Preliminary
13A, 500V N-CHANNEL POWER MOSFET
Power MOSFET
DESCRIPTION
The UTC 13N50K is an N-Channel enhancement mode power MOSFET.
The device adopts planar stripe and uses DMOS technology to minimize and provide lower on-state resistance and faster switching speed.
It can also withstand high energy pulse under the avalanche and commutation mode conditions.
The UTC 13N50K is ideally suitable for high efficiency switch mode power supply, power factor correction, electronic lamp ballast based on half bridge topology.
FEATURES
* RDS(ON) <0.
48Ω @VGS = 10V * Ultra low gate charge (typical 39nC ) * Low reverse transfer Capacitance ( CRSS = typical 20pF ) * Fast switching capability * Avalanche energy tested * Improved dv/dt capability, high ruggedness
SYMBOL
1
TO-220F2
ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
13N50KL-TF2-T
13N50KG-TF2-T
Package TO-220F2
Pin Assignment 123 GDS
Packing Tube
www.
unisonic.
com.
tw Copyright © 2014 Unisonic Technologies Co.
, Ltd
1 of 7
QW-R502-A85.
a
13N50K
MARKING INFORMATION
PACKAGE
TO-220F2
Preliminary
MARKING
Power MOSFET
UNISONIC TECHNOLOGIES CO.
, LTD www.
unisonic.
com.
tw
2 of 7
QW-R502-A85.
a
13N50K
Preliminary
Power MOSFET
ABSOLUTE MAXIMUM RATINGS (TC = 25°C, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage Gate-Source Voltage
VDSS 500 V VGSS ±30 V
Continuous Drain Current Pulsed Drain Current (Note 2)
ID 13 A IDM 52 A
Avalanche Current (Note 2) Single Pulsed Avalanche Energy (Note 3)
IAR EAS
13 A 700 mJ
Repetitive Avalanche Energy (Note 2) Peak Diode Recovery dv/dt (Note 4)
EAR dv/dt
17 mJ 4.
5 V/ns
Power Dissipation (TC=25°C) Junction Temperature
PD 48 W
TJ
+150
°C
Storage Temperature
TSTG
-55~+150
°C
Notes: 1.
Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not i...
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