N-CHANNEL POWER MOSFET
Description
UNISONIC TECHNOLOGIES CO.
, LTD
12N65K-MT
Preliminary
12A, 650V N-CHANNEL POWER MOSFET
DESCRIPTION
The UTC 12N65K-MT are N-Channel enhancement mode power field effect transistors (MOSFET) which are produced by using UTC’s proprietary, planar stripe and DMOS technology.
These devices are suited for high efficiency switch mode power supply.
To minimize on-state resistance, provide superior switching performance and withstand high energy pulse in the avalanche and commutation mode, the advanced technology has been especially tailored.
FEATURES
* RDS(ON) < 0.
75 Ω @ VGS = 10 V, ID = 6 A * Fast switching capability * Avalanche energy specified * Improved dv/dt capability, high ruggedness
SYMBOL
Power MOSFET
ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
12N65KL-TF1-T
12N65KG-TF1-T
12N65KL-TF2-T
12N65KG-TF2-T
Note: Pin Assignment: G: Gate D: Drain S: Source
Package
TO-220F1 TO-220F2
Pin Assignment 123 GDS GDS
Packing
Tube Tube
12N65KL-TF1-T
(1)Packing Type (2)Package Type (3)Green Package
(1) T: Tube (2) TF1: TO-220F1, TF2: TO-220F2 (3) L: Lead Free, G: Halogen Free and Lead Free
MARKING
www.
unisonic.
com.
tw Copyright © 2015 Unisonic Technologies Co.
, Ltd
1 of 7
QW-R502-B07.
F
12N65K-MT
Preliminary
Power MOSFET
ABSOLUTE MAXIMUM RATINGS (TC = 25°C, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
VDSS 650 V
Gate-Source Voltage Drain Current Avalanche Energy
Continuous Pulsed (Note 2) Single Pulsed (Note 3)
VGSS ID IDM EAS
±30 V 12 A 48 A 400 mJ
Peak Diode Recovery dv/dt (Note 4)
dv/dt
4.
5 V/ns
Power Dissipation
PD 51 W
Junction Temperature Operating Temperature
TJ TOPR
+150 -55 ~ +150
°C °C
Storage Temperature
TSTG
-55 ~ +150
°C
Notes: 1.
Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2.
Repetitive Rating : Pulse width limited ...
Similar Datasheet
