MOSFET
Description
MOSFET
MetalOxideSemiconductorFieldEffectTransistor
BareDie
OptiMOS™3PowerMOSTransistorChip IPC045N25N3
DataSheet
Rev.
2.
5 Final
Industrial&Multimarket
OptiMOS™3PowerMOSTransistorChip
IPC045N25N3
1Description
•N-channelenhancementmode •FordynamiccharacterizationrefertothedatasheetofBSZ16DN25NS3 G •AQL0.
65forvisualinspectionaccordingtofailurecatalogue •ElectrostaticDischargeSensitiveDeviceaccordingtoJEDEC •Diebond:solderedorglued •Backsidemetallization:NiVsystem •Frontsidemetallization:AlSisystem •Passivation:nitride(onlyonedgestructure)
PowerMOSTransistorChip
Table1KeyPerformanceParameters
Parameter
Value
Unit
V(BR)DSS RDS(on) Die size
250 1651) 2.
5 x 1.
8
V mΩ mm2
Thickness
250
µm
Drain
Gate Source
Type/OrderingCode IPC045N25N3
Package Chip
Marking not defined
RelatedLinks -
2ElectricalCharacteristicsonWaferLevel
atTj=25°C,unlessotherwisespecified
Table2
Parameter
Drain-source breakdown voltage Gate threshold voltage Zero gate voltage drain current Gate-source leakage current Drain-source on- resistance Reverse diode forward on-voltage Avalanche energy, single pulse
Symbol
V(BR)DSS VGS(th) IDSS IGSS RDS(on) VSD EAS
Min.
250 2 -
Values Typ.
Max.
-34 0.
1 1 1 100 1462) 1653) 0.
9 1.
2 - 1204)
Unit Note/TestCondition
V VGS=0V,ID=1mA V VDS=VGS,ID=32µA µA VGS=0V,VDS=200V nA VGS=20V,VDS=0V mΩ VGS=10V,ID=5.
5A V VGS=0V,IF=10.
9A mJ ID =5.
5 A, RGS =25 Ω
1) packaged in a S3O8 (see BSZ16DN25NS3 G) 2)typicalbaredieRDS(on);VGS=10V 3) limited by wafer test-equipment 4) Wafer tested.
For general avalanche capability refer to the datasheet of BSZ16DN25NS3 G
Final Data Sheet
2
Rev.
2.
5,2014-07-23
3PackageOutlines
OptiMOS™3PowerMOSTransistorChip IPC045N25N3
Figure1OutlineChip,dimensionsinµm
Final Data Sheet
3
Rev.
2.
5,2014-07-23
OptiMOS™3PowerMOSTransistorChip IPC045N25N3
RevisionHistory
IPC04...
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