20V N-CHANNEL MOSFET
Description
PPJS6414
20V N-Channel Enhancement Mode MOSFET
Voltage
20 V
Current
6.
6A
Features
RDS(ON) , VGS@4.
5V, ID@6.
6A<36mΩ RDS(ON) , VGS@2.
5V, ID@4.
1A<52mΩ RDS(ON) , VGS@1.
8V, ID@1.
9A<92mΩ Advanced Trench Process Technology Specially Designed for Switch Load, PWM Application, etc.
.
Lead free in compliance with EU RoHS 2011/65/EU
directive.
Green molding compound as per IEC61249 Std.
(Halogen Free)
Mechanical Data
Case: SOT-23 6L-1 Package Terminals: Solderable per MIL-STD-750, Method 2026 Approx.
Weight: 0.
0005 ounces, 0.
014 grams Marking: S14
SOT-23 6L-1
Unit : inch(mm)
Maximum
Ratings
and
Thermal
Characteristics
o
(TA=25 C
unless
otherwise
noted)
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current Power Dissipation
Ta=25oC Derate above 25oC
Operating Junction and Storage Temperature Range
Typical Thermal resistance - Junction to Ambient (Note 3)
SYMBOL VDS VGS ID IDM
PD
TJ,TSTG
RθJA
LIMIT 20 +12 6.
6 26.
4 2 16
-55~150
62.
5
UNITS V V A A W
mW/ oC oC
oC/W
December 31,2014-REV.
02
Page 1
PPJS6414
Electrical
Characteristics
o
(TA=25 C
unless
otherwise
noted)
PARAMETER Static Drain-Source Breakdown Voltage Gate Threshold Voltage
Drain-Source On-State Resistance
Zero Gate Voltage Drain Current Gate-Source Leakage Current Dynamic Total Gate Charge Gate-Source Charge Gate-Drain Charge Input Capacitance Output Capacitance Reverse Transfer Capacitance Switching Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Drain-Source Diode Maximum Continuous Drain-Source Diode Forward Current
SYMBOL
BVDSS VGS(th)
RDS(on)
IDSS IGSS
Qg Qgs Qgd Ciss Coss Crss
td(on) tr
td(off) tf
IS
TEST CONDITION
VGS=0V, ID=250uA VDS=VGS, ID=250uA VGS=4.
5V, ID=6.
6A VGS=2.
5V, ID=4.
1A VGS=1.
8V, ID=1.
9A VDS=20V, VGS=0V VGS=+12V, VDS=0V
VDS=10V, ID=6.
6A, VGS=4.
5V (Note 1,2)
VDS=10V, VGS=0V, f=1.
0MHZ
VDD=10V, ID=6.
6A, VGS=4.
5V, RG=6Ω (Note 1,2)
---
Diode Forward Voltage
VSD IS=1.
0A, ...
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