IGBT - Infineon
Description
IGBT
Highspeed5IGBTinTRENCHSTOPTM5technologycopackedwithRAPID2 fastandsoftantiparalleldiode
IKZ50N65NH5
650VDuoPackIGBTanddiode Highspeedseriesfifthgeneration
Datasheet
IndustrialPowerControl
IKZ50N65NH5
Highspeedseriesfifthgeneration
Highspeed5IGBTinTRENCHSTOPTM5technologycopackedwithRAPID2 fastandsoftantiparalleldiode
FeaturesandBenefits: HighspeedH5technologyoffering •UltralowlossswitchingthankstoKelvinemitterpinin combinationwithTRENCHSTOPTM5 •Best-in-classefficiencyinhardswitchingandresonant topologies •PlugandplayreplacementofpreviousgenerationIGBTs •650Vbreakdownvoltage •LowgatechargeQG •IGBTcopackedwithRAPID2fastandsoftantiparalleldiode •Maximumjunctiontemperature175°C •QualifiedaccordingtoJEDECfortargetapplications •Pb-freeleadplating;RoHScompliant •CompleteproductspectrumandPSpiceModels: http://www.
infineon.
com/igbt/
Applications •Uninterruptiblepowersupplies •Weldingconverters •Midtohighrangeswitchingfrequencyconverters •Solarstringinverters
Packagepindefinition: •PinC&backside-collector •PinE-emitter •PinK-Kelvinemitter •PinG-gate Pleasenote:TheemitterandKelvinemitterpinsarenot exchangeable.
Theirexchangemightleadtomalfunction.
KeyPerformanceandPackageParameters
Type
VCE IC VCEsat,Tvj=25°C
IKZ50N65NH5
650V 50A
1.
65V
Tvjmax 175°C
Marking K50ENH5
Package PG-TO247-4
2 Rev.
2.
1,2014-10-31
IKZ50N65NH5
Highspeedseriesfifthgeneration
TableofContents Description .
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2 Table of Contents .
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3 Maximum Ratings .
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