Silicon diode
Description
TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type
1SS385
High Speed Switching
1SS385
Unit: mm
z Low forward voltage: VF (2) = 0.23V (typ.) @IF = 5mA z Small package
Absolute Maximum Ratings (Ta = 25°C)
Characteristic
Symbol
Rating
Unit
Maximum (peak) reverse Voltage Reverse voltage Maximum (peak) forward current Average forward current Surge curr...
Toshiba Semiconductor
1SS385 PDF File
Similar Datasheet