UHF power LDMOS transistor
Description
BLF882; BLF882S
UHF power LDMOS transistor
Rev.
2 — 3 July 2015
Product data sheet
1.
Product profile
1.
1 General description
A 200 W LDMOS RF power transistor for broadcast transmitter applications and industrial applications.
The transistor can deliver 200 W in broadband applications from HF to 860 MHz.
The excellent ruggedness and broadband performance of this device makes it ideal for digital transmitter applications.
Table 1.
Test information RF performance at Tcase = 25 C in a class-AB test circuit.
Test signal
f VDS PL(AV)
(MHz)
(V) (W)
Gp D (dB) (%)
RF performance in a class-AB 705 MHz narrowband test circuit
CW, class-AB
705
50 180
21 62
CW pulsed, class-AB
705
50 200
21 63
RF performance in a class-AB 470 MHz to 705 MHz broadband test circuit
DVB-T (8k OFDM)
470 to 705 50 33
20 28 to 31
PAR (dB)
-
8.
0 to 8.
4 [1]
[1] PAR of output signal at 0.
01% probability on CCDF; PAR of input signal = 9.
5 dB at 0.
01% probability on CCDF.
1.
2 Features and benefits
Integrated ESD protection Excellent ruggedness High power gain High efficiency Excellent reliability Easy power control Compliant to Directive 2002/95/EC, regarding restriction of hazardous substances
(RoHS)
1.
3 Applications
Transmitter applications in the HF to 860 MHz frequency range Industrial applications in the HF to 860 MHz frequency range Broadcast transmitters
NXP Semiconductors
BLF882; BLF882S
UHF power LDMOS transistor
2.
Pinning information
Table 2.
Pinning Pin Description BLF882 (SOT502A) 1 drain 2 gate 3 source
BLF882S (SOT502B) 1 drain 2 gate 3 source
[1] Connected to flange.
3.
Ordering information
Simplified outline Graphic symbol
[1]
V\P
[1]
V\P
Table 3.
Ordering information
Type number
Package
Name Description
BLF882
- flanged ceramic package; 2 mounting holes; 2 leads
BLF882S
- earless flanged ceramic package; 2 leads
Version SOT502A SOT502B
4.
Limiting values
Table 4.
Limiting values In accordan...
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