UHF power LDMOS transistor
Description
BLF879P; BLF879PS
UHF power LDMOS transistor
Rev.
3 — 12 July 2013
Product data sheet
1.
Product profile
1.
1 General description
A 500 W LDMOS RF power transistor for broadcast transmitter applications and industrial applications.
The excellent ruggedness of this device makes it ideal for digital and analog transmitter applications.
Table 1.
Application information RF performance at VDS = 42 V unless otherwise specified.
Mode of operation f
PL(AV) PL(M)
Gp
D IMD3 IMDshldr
(MHz)
(W) (W) (dB) (%) (dBc) (dBc)
RF performance in a common source 860 MHz narrowband test circuit
2-tone, class-AB DVB-T (8k OFDM)
f1 = 860; f2 = 860.
1 200 858 95
-
21 47 33 -
21 33 -
31 [1]
RF performance in a common source 470 MHz to 860 MHz broadband test circuit
DVB-T (8k OFDM) 858
95 -
20 32 -
32 [1]
PAR (dB)
8.
2 [2]
8.
0 [2]
[1] Measured [dBc] with delta marker at 4.
3 MHz from center frequency.
[2] PAR (of output signal) at 0.
01 % probability on CCDF; PAR of input signal = 9.
5 dB at 0.
01 % probability on CCDF.
1.
2 Features and benefits
Excellent ruggedness Optimum thermal behavior and reliability, Rth(j-c) = 0.
15 K/W High power gain High efficiency Designed for broadband operation (470 MHz to 860 MHz) Internal input matching for high gain and optimum broadband operation Excellent reliability Easy power control Compliant to Restriction of Hazardous Substances (RoHS) Directive 2002/95/EC
1.
3 Applications
Communication transmitter applications in the UHF band Industrial applications in the UHF band
NXP Semiconductors
BLF879P; BLF879PS
UHF power LDMOS transistor
2.
Pinning information
Table 2.
Pinning Pin Description BLF879P (SOT539A) 1 drain1 2 drain2 3 gate1 4 gate2 5 source
BLF879PS (SOT539B) 1 drain1 2 drain2 3 gate1 4 gate2 5 source
[1] Connected to flange.
3.
Ordering information
Simplified outline Graphic symbol
12
1
5
34 [1]
3 5
4
2
sym117
12
1
5
34 [1]
3 5
4
2
sym117
Table 3.
Ordering information
Type number
Packag...
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