N-Channel Enhancement Mode Field Effect Transistor
Description
CEP12N65/CEB12N65
CEF12N65
N-Channel Enhancement Mode Field Effect Transistor
PRELIMINARY
FEATURES
Type CEP12N65 CEB12N65 CEF12N65
VDSS 650V 650V
650V
RDS(ON) 0.
73Ω 0.
73Ω
0.
73Ω
ID 12A 12A 12A d
@VGS 10V 10V
10V
Super high dense cell design for extremely low RDS(ON).
High power and current handing capability.
Lead-free plating ; RoHS compliant.
D
DG
G S
CEB SERIES TO-263(DD-PAK)
G D S
CEP SERIES TO-220
G
D S CEF SERIES
TO-220F
S
ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted
Parameter
Symbol
Limit
TO-220/263
TO-220F
Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous Drain Current-Pulsed a
VDS VGS ID IDM e
650
±30
12 48
12 d 48d
Maximum Power Dissipation @ TC = 25 C - Derate above 25 C
250 60 PD 1.
67 0.
4
Single Pulsed Avalanche Energy h Single Pulsed Avalanche Current h
EAS 607 IAS 9
Operating and Store Temperature Range
TJ,Tstg
-55 to 175
Thermal Characteristics
Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient
Symbol RθJC RθJA
Limit 0.
6 62.
5
2.
5 65
Units
V V A A W W/ C mJ A C
Units C/W C/W
This is preliminary information on a new product in development now .
Details are subject to change without notice .
1
Rev 4.
2012.
Nov.
http://www.
cetsemi.
com
CEP12N65/CEB12N65 CEF12N65
Electrical Characteristics Tc = 25 C unless otherwise noted
Parameter
Symbol
Test Condition
Off Characteristics
Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate Body Leakage Current, Forward Gate Body Leakage Current, Reverse On Characteristics b
BVDSS IDSS IGSSF IGSSR
VGS = 0V, ID = 250µA VDS =650V, VGS = 0V VGS = 30V, VDS = 0V VGS = -30V, VDS = 0V
Gate Threshold Voltage Static Drain-Source On-Resistance
VGS(th) RDS(on)
VGS = VDS, ID = 250µA VGS = 10V, ID = 5.
5A
Dynamic Characteristics c
Input Capacitance Output Capacitance Reverse Transfer Capacitance Switching Characteristics c
Ciss Coss Crss
VDS = 25V, VGS = 0V, f = 1.
0 MHz
Turn-On Delay Time Turn-On Rise Tim...
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