Power MOSFET
Description
Applications l High Frequency Synchronous Buck
Converters for Computer Processor Power l Lead-Free
Benefits l Low RDS(on) at 4.
5V VGS l Ultra-Low Gate Impedance l Fully Characterized Avalanche Voltage
and Current
Absolute Maximum Ratings
Parameter VDS Drain-to-Source Voltage
VGS ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C PD @TC = 100°C
Gate-to-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current
Maximum Power Dissipation Maximum Power Dissipation
TJ TSTG
Linear Derating Factor Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Thermal Resistance
Parameter RθJC Junction-to-Case RθJA Junction-to-Ambient (PCB Mount)
PD - 95220
IRL3715ZCSPbF IRL3715ZCLPbF
HEXFET® Power MOSFET
VDSS RDS(on) max Qg
20V 11mΩ 7.
0nC
D2Pak IRL3715ZCS
TO-262 IRL3715ZCL
Max.
20 ± 20
50
36
200
45 23 0.
30 -55 to + 175
300 (1.
6mm from case)
Typ.
–––
–––
Max.
3.
33
40
Units V A
W W/°C
°C
Units °C/W
Notes through
are on page 11 www.
irf.
com
1
04/27/04
IRL3715ZCS/LPbF
Static @ TJ = 25°C (unless otherwise specified)
BVDSS ∆ΒVDSS/∆TJ RDS(on)
Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp.
Coefficient Static Drain-to-Source On-Resistance
Min.
20 ––– –––
Typ.
––– 0.
014 9.
2
Max.
Units
Conditions
––– V VGS = 0V, ID = 250µA
––– V/°C Reference to 25°C, ID = 1mA 11 mΩ VGS = 10V, ID = 15A
VGS(th) ∆VGS(th)/∆TJ
Gate Threshold Voltage Gate Threshold Voltage Coefficient
––– 1.
65 –––
12.
4 2.
1 -5.
2
15.
5 2.
55 –––
VGS = 4.
5V, ID = 12A V VDS = VGS, ID = 250µA mV/°C
IDSS
Drain-to-Source Leakage Current
––– ––– 1.
0 µA VDS = 16V, VGS = 0V
––– ––– 150
VDS = 16V, VGS = 0V, TJ = 125°C
IGSS
Gate-to-Source Forward Leakage
––– ––– 100 nA VGS = 20V
Gate-to-Source Reverse Leakage
––– ––– -100
VGS = -20V
gfs Forward Transconductance Qg Total Gate Charge
31 ––– ––– ––– 7.
0 11
S VDS = 10V, ID = 12A
Qgs1 Qgs2 Qgd Qgodr
Pre-Vth Gate-to-Source Charge Post-Vth ...
Similar Datasheet
