Power Field Effect Transistor
Description
IRF830
Power Field Effect Transistor
N−Channel Enhancement Mode Silicon Gate TMOS
This TMOS Power FET is designed for high voltage, high speed power switching applications such as switching regulators, converters, solenoid and relay drivers.
Silicon Gate for Fast Switching Speeds Low RDS(on) to Minimize On−Losses, Specified at Elevated
Temperature
Rug...
ON Semiconductor
IRF830 PDF File
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