Trench NPT IGBT - NCE Power Semiconductor
Description
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ncepower.
com
NCE15G135T
1350V, 15A, Trench NPT IGBT
Features
z Trench NPT( Non Punch Through) IGBT z High speed switching z Low saturation voltage: VCE(sat)=2.
0V@IC=15A z High input impedance
Applications
z Inductive heating, Microwave oven, Inverter, UPS, etc.
z Soft switching applications
General Description
Using advanced Trench NPT technology, NCE’s 1350V IGBTs offers superior conduction and switching performances, and easy parallel operation with exceptional avalanche ruggedness.
This device is designed for soft switching applications.
Absolute Maximum Ratings
Pb Free Product
NCE15G135T
C
G E
Symbol Description
VCES VGES
IC
ICM(1)
PD
TJ Tstg
TL
Collector to Emitter Voltage
Gate to Emitter Voltage
Continuous Collector Current Continuous Collector Current Pulsed Collector Current
@TC=25°C @TC=100°C
Maximum Power Dissipation @TC=25°C Maximum Power Dissipation @TC=100°C Operating Junction Temperature
Storage Temperature Range
Maximum Lead Temp.
for soldering Purposes, 1/8" from
case for 5seconds
Notes: 1.
Repetitive rating, Pulse width limited by max.
junction temperature
Ratings
1350 +/-30
30 15 45 220 88 -55 to +150 -55 to +150
300
Units
V V A A A W W °C °C
°C
Wuxi NCE Power Semiconductor Co.
, Ltd
Page 1
v1.
0
Pb Free Product
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com
Thermal Characteristics
Symbol
R JC RJA
Parameter
Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient
Electrical Characteristics of the IGBT TC=25°C
Symbol Parameter
Off Characteristics
BVCES
Collector to Emitter Breakdown Voltage
ICES Collector Cut-Off Current IGES G-E Leakage Current
On Characteristics
VGE(th) G-E Threshold Voltage
VCE(sat)
Collector to Emitter Saturation Voltage
Dynamic Characteristics
Cies Input Capacitance
Coes Output Capacitance
Cres
Reverse Transfer Capacitance
Switching Characteristics
td(on) Turn-On Delay Time tr Rise Time
td(off) Turn-Off Delay Time tf Fall Time Eon Turn-On Switching Loss Eoff Turn-Off Switching Loss Et...
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