P-Channel Power MOSFET
Description
Ordering number : ENA2281A
MCH6664
P-Channel Power MOSFET
–30V, –1.
5A, 325mΩ, Dual MCPH6
http://onsemi.
com
Features
• ON-resistance Pch : RDS(on)1=250mW (typ.
) • 4V drive
• Halogen free compliance
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Symbol
Conditions
Drain to Source Voltage Gate to Source Voltage Drain Current (DC) Drain Current (Pulse) Power Dissipation Junction Temperature
VDSS VGSS ID IDP PD Tj
PW≤10μs, duty cycle≤1% When mounted on ceramic substrate (900mm2×0.
8mm) 1unit
Storage Temperature
Tstg
Lead Temperature for Soldering Purposes, 3mm from Case for 10 Seconds
TL
This product is designed to “ESD immunity < 200V*”, so please take care when handling.
* Machine Model
Thermal Resistance Ratings
Parameter Junction to Ambient
Symbol RθJA
Value 156.
3
Unit °C/W
Value --30 ±20 --1.
5 --6 0.
8 150
--55 to +150
260
Unit V V A A W °C °C
°C
Stresses exceeding Maximum Ratings may damage the device.
Maximum Ratings are stress ratings only.
Functional operation above the Recommended Operating Conditions is not implied.
Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.
Electrical Characteristics at Ta=25°C
Parameter
Symbol
Drain to Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate to Source Leakage Current Gate Threshold Voltage Forward Transconductance
Static Drain-to-Source On-State Resistance
Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-ON Delay Time Rise Time Turn-OFF Delay Time Fall Time Total Gate Charge Gate to Source Charge Gate to Drain “Miller” Charge Forward Diode Voltage
V(BR)DSS IDSS IGSS VGS(th) gFS RDS(on)1 RDS(on)2 RDS(on)3 Ciss
Coss
Crss
td(on) tr td(off) tf Qg
Qgs
Qgd
VSD
Conditions ID=--1mA, VGS=0V VDS=--30V, VGS=0V VGS=±16V, VDS=0V VDS=--10V, ID=--1mA VDS=--10V, ID=--0.
8A ID=--0.
8A, VGS=--10V ID=--0.
4A, VGS=--4.
5V ID=--0.
4A, VGS=--4V
VDS=--10V, f=1MHz
See specified Test Circuit.
VDS=--15V, VGS=--10V, ID=--...
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