2SC2335 - SavantIC
Description
SavantIC Semiconductor
Silicon NPN Power Transistors
www.
DataSheet4U.
com
DESCRIPTION ·With TO-220C package ·Collector-emitter sustaining voltage
VCEO(sus)=400V(Min) ·Collector-emitter saturation voltage
VCE(sat)=1.
0V(Max.
)@IC=3.
0A,IB=0.
6A ·Switching time-tf=1.
0µs(Max.
)@IC=3.
0A
APPLICATIONS ·Designed for use in high-voltage ,high-
speed ,power switching in inductive circuit, particularly suited for 115 and 220V switchmode applications such as switching regulator’s ,inverters,,DC-DC and converter
PINNING PIN 1 2 3
DESCRIPTION
Base Collector;connected to mounting base Emitter
Product Specification
2SC2335
Absolute maximum ratings(Ta=25 )
SYMBOL
PARAMETER
VCBO
Collector-base voltage
VCEO
Collector-emitter voltage
VEBO
Emitter-base voltage
IC Collector current
ICM Collector current-peak
IB Base current PD Total power dissipation
Tj Junction temperature
Tstg Storage temperature
CONDITIONS Open emitter Open base Open collector
TC=25
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-C
Thermal resistance junction to case
VALUE 500 400 7 7 15 3.
5 40 150
-50~150
UNIT V V V A A A W
MAX 3.
125
UNIT /W
SavantIC Semiconductor
Silicon NPN Power Transistors
www.
DataSheet4U.
com
Product Specification
2SC2335
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(SUS)CEO Collector-emitter sustaining voltage IC=3.
0A ; IB1=0.
6A,L=1mH
VCEsat Collector-emitter saturation voltage IC=3A; IB=0.
6A
VBEsat
Base-emitter saturation voltage
IC=3A; IB=0.
6A
ICBO Collector cut-off current ICEX Collector cut-off current IEBO Emitter cut-off current
VCB=400V ;IE=0
VCE=400V ;VBE(off)=-1.
5V TC=125
VEB=5V; IC=0
hFE-1
DC current gain
IC=0.
1A ; VCE=5V
hFE-2
DC current gain
IC=1.
0A ; VCE=5V
hFE-3
DC current gain
IC=3.
0A ; VCE=5V
Switching times
ton Turn-on time tstg Storage time tf Fall time
VCC=150V;IC=3.
0A; IB1=-IB2=600mA; RL=50E
MIN TYP.
MAX UNIT 400 V
1.
0 V 1.
2 V 10 µA 10 µA 5.
0 mA 10 µA 20 80 20 80 10
1.
0 µs 2.
5 µs 1.
0 µs
hFE-2 Cla...
Similar Datasheet
