NPN Transistor
Description
BC848C
SOT-23 BIPOLAR TRANSISTORS TRANSISTOR(NPN)
FEATURES
* Power dissipation
PCM :
0.
225
W (Tamb=25OC) Note1
* Collector current
ICM :
0.
1 A
* Collector-base voltage
VCBO : 30 V
* Operating and storage junction temperature range TJ,Tstg: -55OC to +150OC
MECHANICAL DATA
* Case: Molded plastic
* Epoxy: UL 94V-O rate flame retardant
* Lead: MIL-STD-202E method 208C guaranteed
* Mounting position: Any
* Weight: 0.
008 gram
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25OC ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
ELECTRICAL CHARACTERISTICS ( @ TA = 25oC unless otherwise noted )
CHARACTERISTICS
SYMBOL
Collector-base breakdown voltage (IC= 10mA, IE=0) Collector-emitter breakdown voltage (IC= 10mA, IB=0) Emitter-base breakdown voltage (IE= 10mA, IC=0)
VCBO VCEO VEBO
Collector cut-off current (VCB= 30V, IE=0) Collector cut-off current (VCE= 30V, IB=0) Emitter cut-off current (VEB= 5V, IC=0) DC current gain (VCE= 5V, IC= 2mA) Collector-emitter saturation voltage (IC= 100mA, IB= 5mA) Base-emitter saturation voltage (IC= 100mA, IB= 5mA)
ICBO ICEO IEBO hFE(1) VCE(sat) VBE(sat)
Transition frequency (VCE= 5V, IC= 10mA, f= 100MHZ)
DEVICE MARKING
BC848C Note1.
Transistor mounted on an FR4 Printed-circuit board.
2.
“Fully ROHS compliant”, “100% Sn plating (Pb-free)”.
fT
SOT-23
COLLECTOR 3
BASE 1
2 EMITTER
0.
006(0.
15) 0.
003(0.
08)
0.
055(1.
40) 0.
047(1.
20)
0.
020(0.
50) 0.
012(0.
30)
0.
043(1.
10) 0.
035(0.
90)
0.
004(0.
10) 0.
000(0.
00)
0.
020(0.
50) 0.
012(0.
30)
0.
100(2.
55) 0.
089(2.
25)
0.
019(2.
00) 0.
071(1.
80)
1
3
2
0.
118(3.
00) 0.
110(2.
80)
Dimensions in inches and (millimeters)
MIN 30 30 6 420 100
1L
MAX 0.
1 0.
1 0.
1
800 0.
5 1.
1
-
UNITS V V V mA mA mA V V
MHZ
2007-3
DISCLAIMER NOTICE
Rectron Inc reserves the right to make changes without notice to any product specification herein, to make corrections, modifications, enhancements or othe...
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