SMD Schottky Barrier Diode
Description
B0530WS
Taiwan Semiconductor Small Signal Product
200mW, Low VF SMD Schottky Barrier Diode
FEATURES
- Fast switching device(trr<4.
0nS) - Surface mount device type - Moisture sensitivity level 1 - Pb free and RoHS compliant - Matte Tin(Sn) lead finish with Nickel(Ni) underplate - Green compound (Halogen free) with suffix "G" on
packing code and prefix "G" on date code
MECHANICAL DATA
- Case: Flat lead SOD-323 small outline plastic package - Terminal : Matte tin plated, lead free,
solderable per MIL-STD-202, method 208 guaranteed - High temperature soldering guaranteed: 260°C/10s - Polarity: Indicated by cathode band - Weight : 4.
85 ± 0.
5 mg
SOD-323F
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (TA=25℃ unless otherwise noted)
PARAMETER
SYMBOL
VALUE
Peak Repetitive Reverse Voltage Mean Forward Current Non-Repetitive Peak Forward Surge Current @t=8.
3ms Power Dissipation Thermal Resistance form Junction to Ambient Junction Temperature Storage Temperature Range
VRRM IO IFSM PD
RthjA TJ TSTG
30 500
5 200 426 125 - 65 to + 125
UNIT
V mA A mW oC/W oC oC
PARAMETER Reverse Breakdown Voltage Reverse Leakage Current
Forward Voltage Junction Capacitance
TEST CONDITION
at IR = 500µA at VR = 15 V at VR = 20 V at VR = 30 V at IF = 100mA at IF = 500mA VR=0, f=1.
0MHz
SYMBOL V(BR) IR
VF CJ
MIN 30 ----
--
MAX
80 100 500 0.
36 0.
47 58
UNIT V µA
V pF
Document Number: DS_S1405006
Version: G14
Small Signal Product
RATINGS AND CHARACTERISTICS CURVES
(TA=25℃ unless otherwise noted) Fig.
1 Typical Forward Characteristics
10
Instantaneous Forward Current (A)
1
0.
1
Power Dissipation (mW)
0.
01 0.
0 0.
2 0.
4 0.
6 0.
8 1.
0 1.
2 1.
4 1.
6 Instantaneous Forward Volatge (V)
Fig.
3 Admissible Power Dissipation Curve 250
200
150
100
50
0 0 25 50 75 100 125 150 Ambient Temperature (°C)
Fig.
5 Typical Reverse Characteristics 100
10
Reverse Current (mA)
1
0.
1
0.
01 0
10 20 Reverse Voltage (V)
Document Number: DS_S1405006
30
Junction Capacitance (pF)
Io: Mean Forward Current (A)
...
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