Power Transistor
Description
CoolMOS® Power Transistor
Features • Lowest figure-of-merit RONxQg • Ultra low gate charge • Extreme dv/dt rated • High peak current capability • Qualified according to JEDEC1) for target applications • Pb-free lead plating; RoHS compliant
CoolMOS CP is designed for: • Hard switching SMPS topologies
Product Summary
V DS @ Tj,max
R DS(on),max@T j= 25°C
Q g,typ
6.
6
IPA60R250CP
650 V 0.
250 Ω
26 nC
PG-TO220 FP
Type IPA60R250CP
Package PG-TO220FP
Marking 66RR225909PP
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter Continuous drain current2)
Pulsed drain current3)
Avalanche energy, single pulse
Avalanche
energy,
repetitive
t
3),4) AR
Avalanche
current,
repetitive
t
3),4) AR
MOSFET dv /dt ruggedness
Gate source voltage
Power dissipation Operating and storage temperature Mounting torque
Symbol Conditions
I D T C=25 °C
T C=100 °C
I D,pulse T C=25 °C
E AS E AR I AR dv /dt V GS
I D=5.
2 A, V DD=50 V I D=5.
2 A, V DD=50 V
V DS=0.
.
.
480 V static
AC (f >1 Hz)
P tot T C=25 °C T j, T stg
M2.
5 screws
Value 12 8 40 345 0.
52 5.
2 50 ±20 ±30 33
-55 .
.
.
150 50
Unit A
mJ
A V/ns V
W °C Ncm
Rev.
2.
1
page 1
2012-01-09
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter Continuous diode forward current2) Diode pulse current3) Reverse diode dv /dt 5)
Symbol Conditions
IS I S,pulse
T C=25 °C
dv /dt
IPA60R250CP
Value 12 40 15
Unit A
V/ns
Parameter
Symbol Conditions
min.
Values typ.
Unit max.
Thermal characteristics
Thermal resistance, junction - case
Thermal resistance, junction ambient
R thJC R thJA
Soldering temperature, wavesoldering only allowed at leads
T sold
leaded
1.
6 mm (0.
063 in.
) from case for 10 s
- - 3.
75 K/W - - 80 - - 260 °C
Electrical characteristics, at T j=25 °C, unless otherwise specified
Static characteristics Drain-source breakdown voltage
V (BR)DSS V GS=0 V, I D=250 µA
600
-
-V
Gate threshold voltage
V GS(th) V DS=V GS, I D=0,52 mA 2.
5 3 3.
5
Zero gate voltage drain current...
Similar Datasheet
