4V Drive Pch MOSFET
Description
Transistors
4V Drive Pch MOSFET
RSY160P05
RSY160P05
zStructure Silicon P-channel MOSFET
zFeatures 1) Low On-resistance.
2) Built-in G-S Protection Diode.
3) Same land pattern as CPT3 (D-PAK).
zApplication Switching
zDimensions (Unit : mm)
TCPT
(2)
(1) (3)
zPackaging specifications
Package
Type
Code
Basic ordering unit (pieces)
RSY160P05
Taping TL
2500
zEquivalent circuit
∗1
∗2
zAbsolute maximum ratings (Ta=25°C)
Parameter
Drain-source voltage
Gate-source voltage
Drain current
Continuous Pulsed
Source current (Body diode)
Continuous Pulsed
Total power dissipation
Channel temperature
Range of Storage temperature
∗1 Pw≤10µs, Duty cycle≤1% ∗2 Tc=25°C
Symbol VDSS VGSS ID IDP ∗1 IS ISP ∗1 PD ∗2 Tch Tstg
Limits −45 ±20 ±16 ±32 −16 −32 20 150 −55 to +150
zThermal resistance
Parameter Channel to ambient ∗ Tc=25°C
Symbol Rth (ch-c) ∗
Limits 6.
25
(1) (2)
∗1 ESD PROTECTION DIODE ∗2 BODY DIODE
(3) (1) Gate (2) Drain (3) Source
Unit V V A A A A W °C °C
Unit °C / W
1/5
Transistors
zElectrical characteristics (Ta=25°C)
Parameter
Symbol Min.
Typ.
Max.
Unit
Conditions
Gate-source leakage
IGSS − − ±10 µA VGS= ±20V, VDS=0V
Drain-source breakdown voltage V(BR) DSS −45 − − V ID= −1mA, VGS=0V
Zero gate voltage drain current IDSS − − −1 µA VDS= −45V, VGS=0V
Gate threshold voltage
VGS (th) −1.
0 − −2.
5 V VDS= −10V, ID= −1mA
Static drain-source on-state resistance
RDS (on)∗
− − −
35 50 mΩ ID= −16A, VGS= −10V 45 63 mΩ ID= −8A, VGS= −4.
5V 50 70 mΩ ID= −8A, VGS= −4.
0V
Forward transfer admittance
Yfs ∗ 8.
5
−
−
S VDS= −10V, ID= −8A
Input capacitance
Ciss
− 2150 −
pF VDS= −10V
Output capacitance
Coss − 250 − pF VGS=0V
Reverse transfer capacitance Crss
− 150 −
Turn-on delay time
td (on) ∗ − 13 −
Rise time
tr ∗ − 30 −
Turn-off delay time
td (off) ∗ − 90 −
Fall time
tf ∗ − 105 −
pF f=1MHz
ns ID= −10A ns VDD −25V
VGS= −10V ns RL=2.
5Ω ns RG=10Ω
Total gate charge Gate-source charge Gate-drain charge
Qg ∗ Qgs ∗ Qgd ∗
− − −
17.
0 2...
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