BIMOSFET Monolithic Bipolar MOS Transistor
Description
High Voltage, High Gain BIMOSFETTM Monolithic Bipolar MOS Transistor
IXBH6N170 IXBT6N170
VCES = IC90 = VCE(sat) ≤
1700V 6A 3.4V
Symbol
VCES VCGR
VGES VGEM
IC25 IC90 ICM
SSOA (RBSOA)
PC
TJ TJM Tstg
TTLSOLD Md
Weight
Test Conditions TC = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1MΩ Continuous Transient TC = 25°C TC = 90°C TC = 25°C, 1ms VGE = 15V, TVJ = 12...
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