High Voltage BIMOSFETTM
in High Voltage ISOPLUS i4-PACTM
Monolithic Bipolar MOS Transistor
IXBF 9N160 G
IC25 = 7 A VCES = 1600 V VCE(sat) = 4.9 V tf = 70 ans
1 5
IGBT
Symbol VCES VGES IC25 IC90 ICM VCEK Ptot
Symbol
VCE(sat)
V GE(th)
ICES
IGES t
d(on)
tr td(off) tf Cies Q
Gon
V F
RthJC
Conditions TVJ = 25°C to 150°C
TC = 25°C TC = 90°C
VGE
=
10/0
V;
...
