High Voltage IGBT
Description
High Voltage IGBT with Diode
Advance Technical Information
IXGX 32N170H1
VCES IC25 VCE(sat) tfi(typ)
= 1700 V = 75 A = 3.3 V = 290 ns
Symbol
Test Conditions
Maximum Ratings
VCES VCGR
VGES VGEM
IC25 IC90 ICM
SSOA (RBSOA)
tSC
TJ = 25°C to 150°C TJ = 25°C to 150°C; RGE = 1 MΩ Continuous Transient
1700 1700
±20 ±30
TC = 25°C TC = 90°C TC = 25°C, 1 ms
...
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