N-Channel MOSFET
Description
AOL1708
N-Channel Enhancement Mode Field Effect Transistor
SRFET TM
General Description
Features
The AOL1708 uses advanced trench technology with a monolithically integrated Schottky diode to provide excellent RDS(ON),and low gate charge.
This device is suitable for use as a low side FET in SMPS, load switching and general purpose applications.
-RoHS Compliant -Halogen and Antimony Free Green Device*
VDS (V) = 30V
ID =70A
(VGS = 10V)
RDS(ON) < 5.
9mΩ (VGS = 10V)
RDS(ON) < 9.
5mΩ (VGS = 4.
5V)
UIS Tested Rg,Ciss,Coss,Crss Tested
Ultra SO-8TM Top View
S G
D
Bottom tab connected to drain
G
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain
TC=25°C G
Current B
TC=100°C
Pulsed Drain Current C
ID IDM
Continuous Drain TA=25°C
CurrentA
TA=70°C
Avalanche Current C
Repetitive avalanche energy L=0.
3mH C
IDSM IAR EAR
TC=25°C Power Dissipation B TC=100°C
PD
TA=25°C Power Dissipation A TA=70°C
PDSM
Junction and Storage Temperature Range
TJ, TSTG
D
SRFET TM Soft Recovery MOSFET: Integrated Schottky Diode
S
Maximum 30 ±20
70
60 180 15 12.
0 25 94 71 36 2.
1 1.
3 -55 to 175
Units V V
A
A A A mJ W
W °C
Thermal Characteristics
Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A
Maximum Junction-to-Case D
t ≤ 10s Steady-State Steady-State
Symbol RθJA RθJC
Typ 20 50 1.
5
Max 25 60 2.
1
Units °C/W °C/W °C/W
Alpha & Omega Semiconductor, Ltd.
www.
aosmd.
com
AOL1708
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
STATIC PARAMETERS
BVDSS Drain-Source Breakdown Voltage
IDSS Zero Gate Voltage Drain Current
Conditions
ID=250uA, VGS=0V VDS=30V, VGS=0V
IGSS Gate-Body leakage current
VDS=0V, VGS= ±20V
VGS(th) Gate Threshold Voltage
VDS=VGS ID=250µA
ID(ON)
On state drain current
VGS=10V, VDS=5V
VGS=10V, ID=20A
RDS(ON) Static Drain-Source On-Resistance
VGS=4.
5V, ID=20A
gFS Forward Transconductance
VDS=5V, ID...
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