NP180N04TUJ
MOS FIELD EFFECT TRANSISTOR
Preliminary Data Sheet
R07DS0180EJ0100 Rev.1.00
Dec 17, 2010
Description
The NP180N04TUJ is N-channel MOS Field Effect Transistor designed for high current switching applications.
Features
Low on-state resistance ⎯ RDS(on) = 1.5 mΩ MAX. (VGS = 10 V, ID = 90 A)
Low Ciss: Ciss = 9500 pF TYP. (VDS = 25 V) Designed...