DirectFET Power MOSFET
Description
PD - 97224A
IRF6646PbF
IRF6646TRPbF
l RoHs Compliant l Lead-Free (Qualified up to 260°C Reflow) l Application Specific MOSFETs l Ideal for High Performance Isolated Converter
Primary Switch Socket l Optimized for Synchronous Rectification l Low Conduction Losses l High Cdv/dt Immunity l Low Profile (<0.
7mm) l Dual Sided Cooling Compatible l Compatible with existing Surface Mount Techniques
DirectFET Power MOSFET
VDSS
80V max
Typical values (unless otherwise specified)
VGS
RDS(on)
±20V max
7.
6mΩ@ 10V
Qg tot Qgd Qgs2 Qrr Qoss Vgs(th)
36nC 12nC 2.
0nC 48nC 18nC 3.
8V
MN
DirectFET ISOMETRIC
Applicable DirectFET Outline and Substrate Outline (see p.
7,8 for details)
SQ SX ST
MQ MX MT MN
Description
The IRF6646PbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state resistance in a package that has the footprint of a SO-8 and only 0.
7 mm profile.
The DirectFET package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering techniques.
Application note AN-1035 is followed regarding the manufacturing methods and processes.
The DirectFET package allows dual sided cooling to maximize thermal transfer in power systems, improving previous best thermal resistance by 80%.
The IRF6646PbF is optimized for primary side bridge topologies in isolated DC-DC applications, for 48V(±10%) or 36V to 60V ETSI input voltage range systems, and is also ideal for secondary side synchronous rectification in regulated isolated DC-DC topologies.
The reduced total losses in the device coupled with the high level of thermal performance enables high efficiency and low temperatures, which are key for system reliability improvements, and makes this device ideal for high performance isolated DC-DC converters.
Absolute Maximum Ratings
Parameter
VDS Drain-to-Source Voltage
VGS ID @ TA = 25°C ID @ TA = 70°C ID ...
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